on-state current 8 amp ft08...d surface mount triac this series of triac s uses a high performance pnpn technology. these devices are intended for ac control applications using surface mount technology. the high commutation performances combined with high sensitivity, make them perfect in all applications like solid state relays, home appliances, power tools, small motor drives... jun - 02 absolute maximum ratings, according to iec publication no. 134 rms on-state current non-repetitive on-state current non-repetitive on-state current fusing current peak gate current peak gate dissipation gate dissipation critical rate of rise of on-state current operating temperature range storage temperature range lead temperature for soldering i t(rms) parameter conditions min. max. unit dpak (plastic) gate trigger current < 5 ma to < 50 ma off-state voltage 200 v ?600 v symbol i tsm i tsm i 2 t i gm p gm p g(av) t j t stg t l all conduction angle, t c = 110 ? half cycle, 60 hz half cycle, 50 hz t p = 10 ms, half cycle 20 ? max. 20 ? max. 20 ms max. 10s max. 8 84 80 36 50 -40 -40 a a a a 2 s a w w a/? ? ? ? 4 10 1 +125 +150 260 di/dt mt1 mt2 g mt2 repetitive peak off state voltage parameter voltage unit symbol v drm v rrm b 200 v m 600 d 400 tr 100 ns, f = 120 hz t j = 125 ? i g = 2 x i gt
ft08...d surface mount triac jun - 02 part number information fagor scr current case voltage sensitivity f t 08 08 b d 00 forming tr packaging electrical characteristics gate trigger current off-state leakage current threshold voltage dynamic resistance on-state voltage gate trigger voltage gate non trigger voltage holding current latching current critical rate of voltage rise parameter conditions sensitivity unit symbol i gt (1) i drm v d = 12 v dc , r l = 30 w ma 1 5 0.85 1.55 1.3 0.2 1.6 70 ma ma ? v m w v v v ma ma v/? a/ms max max max max max max max min max max max min min min min /i rrm v tm (2) v gt v gd i h (2) i l dv / dt (2) r th(j-a) thermal resistance junction-ambient t j = 25 ? v r = v rrm , i t = 11 amp, tp = 380 ?, t j = 25 ? v d = 12 v dc , r l = 30 w , t j = 25 ? i t = 100 ma , gate open, t j = 25 ? i g = 1.2 i gt , t j = 25 ? v d = 0.67 x v drm , gate open t j = 125 ? quadrant q1?3 q1?3 q1?3 q1,q3 q2 v d = v drm , r l = 3.3k w , t j = 125 ? ?/w ?/w (1) minimum i gt is guaranted at 5% of i gt max. (2) for either polarity of electrode mt2 voltage with reference to electrode mt1. r th(j-c) thermal resistance junction-case (di/dt)c (2) critical rate of current rise (dv/dt)c= 0.1 v/? t j = 125 ? (dv/dt)c= 10 v/? t j = 125 ? without snubber tj = 125 ? v to (2) r d (2) t j = 125 ? t j = 125 ? 60 t j = 125 ? t j = 25 ? 07 5 7 11 25 16 50 08 10 14 35 10 10 15 20 3.5 1.8 - 15 20 30 100 5.4 2.8 - 25 25 50 200 9 4.5 - 50 80 80 250 9 4.5 4.5 35 50 60 400 9 4.5 4.5
10 8 6 4 2 0 jun - 02 fig. 1a: maximum power dissipation versus rms on-state current (ft0807.d, ft0808.d). 0 25 50 75 100 125 p (w) fig. 2: correlation between maximum power dissipation and maximum allowable temperatures (tamb and tcase) for different thermal resistances heatsink + contact. t case (?) -110 -115 -120 -125 fig. 3: rms on-state current versus ambient temperature fig. 5: relative variation of gate trigger current and holding current versus junction temperature (typical values). i gt , i h (tj) / i gt , i h (tj = 25 ?) ft08...d surface mount triac i t(rms) (a) 0 2 10 8 6 4 2 0 4 6 8 p (w) tamb ( c) tj (?) tamb (?) i t(rms) (a) 1 3 5 7 a = 90 a = 60 a = 30 9 8 7 6 5 4 3 2 1 0 0 25 50 75 100 125 -40 0 2.5 2.0 1.5 1.0 0.5 0.0 40 80 120 -20 20 60 100 a 180 a a = 180 a = 120 fig. 1b: maximum power dissipation versus rms on-state current (ft0811.d, ft0814.d). 0 2 10 8 6 4 2 0 4 6 8 p (w) i t(rms) (a) 1 3 5 7 a = 90 a = 60 a 180 a a = 120 a = 180 a = 30 1.0 k = [zth(j-c) / rth (j-c)] fig. 4: relative variation of thermal impedance junction to case versus pulse duration. 1e-3 1e-2 1e-1 1e+0 tp (s) 0.5 0.2 0.1 rth=15 c/w rth=10 c/w rth=5 c/w rth=0 c/w a = 180 rth(j-a) = rth(j-c) a = 180 rth(j-a) = 55 c/w s(cu) = 1.75 cm 2 140 i h i gt
ft08...d surface mount triac 500 1 10 i tsm (a). i 2 t (a 2 s) fig. 7: non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of i 2 t. tp(ms) 2 5 fig. 8: on-state characteristics (maximum values). 1 10 100 1000 fig. 6: non repetitive surge peak on-state current versus number of cycles. 80 70 60 50 40 30 20 10 0 i tsm (a) number of cycles fig. 9: thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board fr4, copper thickness: 35 ?). tj initial = 25 c f = 50 hz 100 10 i 2 t i tsm tj initial = 25 ? jun - 02 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i tm (a) 4.0 100.0 v tm (v) 4.5 10.0 1.0 0.1 5.0 tj = tj max. tj = 25 c r th(j-a) (?/w) s(cu) (cm 2 ) 0 100 80 60 40 20 0 2 4 6 8 10 12 14 16 18 20 tj max vto = 0.8 v rd = 60 m w
ft08...d surface mount triac package mechanical data dpak to 252-aa a a1 b c c1 c2 d d1 e e1 e h l l1 l2 l3 l4 ref. dimensions milimeters min. nominal max. 2.18 0 0.64 0.46 0.46 5.97 5.21 6.35 5.20 9.40 1.40 2.55 0.46 0.89 0.64 2.3?.18 0.12 0.75?.1 0.8?.013 6.1?.1 6.58?.14 5.36?.1 2.28bsc 9.90?.15 2.6?.05 0.5?.013 1.20?.05 0.83?.1 2.39 0.127 0.89 0.61 0.56 6.22 5.52 6.73 5.46 10.41 1.78 2.74 0.58 1.27 1.02 marking: type number weight: 0.2 g 8 2
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